1. Silicon carbide chu eng nge ni?
Silicon carbide (SIC) hi carbon leh silicon atanga siam compound a ni a, a tlangpuiin black emaw green crystals ang chiah a siam a ni. Thil harsa tak a ni a, melting point sang tak a nei a, thermal conductivity tha tak leh chemical resistance tha tak a nei bawk a, chuvangin grinding, cutting, electronic device leh high-temperature equipment ah te hman a ni nasa hle.
2. Silicon carbide hmanna ber chu engte nge ni?
Abrasive Materials: Grinding wheel, sandpaper, abrasives, etc. siam nan hman thin a ni.
Semiconductor Materials: High-temperature, high-frequency leh high-power electronic device siam nan hman a ni a, chu chu diode, mosfets, etc. a ni.
Refractory Materials: Temperature sang tak awmna hmuna hman thin, high-temperature kiln leh heat exchanger te.
Mechanical Seals: Mechanical hmanrua, pump leh compressor-a thil awmte seal-na atana hman thin.
Ceramic Materials: Wear-resistant leh corrosion-resistant ceramic product hrang hrang siam nan hman a ni.
3. Silicon carbide chi hrang hrang eng nge awm?
Black Silicon Carbide: Carbon a tam zawk a, hardness a sang bawk a, grinding materials. atan a hmang ber a ni.
Green Silicon Carbide: A thianghlimna a sang zawk a, a khauh zawk a, hard materials te tanna atan a hmang ber.
Reaction-bonded silicon carbide (RBSIC): Reaction sintering process hmanga siam, mechanical property tha tak leh corrosion resistance. a nei a ni.
Hot-pressed sintered silicon carbide (HPSIC): Hot-pressing sintering process hmanga siam a ni a, density leh mechanical strength sang zawk a nei.
4. Silicon carbide siam dan tur chu engte nge ni?
Traditional Method: Quartz sand leh petroleum coke inzawmkhawm chu resistance furnace. ah temperature sang takah dahin siam a ni.
Vapor Deposition Method (CVD): Chemical vapor deposition technology hmanga substrate pakhata silicon carbide film dah dan.
Sintering Method: Reaction sintering, hot pressing sintering, etc. te pawh a tel a, silicon carbide powder chu a pianziaah press la, temperature sang takah sintering awm rawh.
5. Semiconductor field-ah hian silicon carbide hian eng nge a thatna?
Breakdown sang tak electric field chakna: Voltage sang zawk hman theihna.
Thermal conductivity sang: Heat dissipation tha tak, power sang tak nei device tan a tha.
Electron mobility sang: Device switching speed a ti tha zawk.
Wide Bandgap: Temperature sang takah electronic performance tha tak a la vawng reng thei.
